Silicon Carbide Transistor Circuits: Infineon Introduces Enhanced CoolSiC – Power Semiconductor Technology

With the M1H, Infineon introduced a 1200V silicon carbide MOSFET that features a wider gate voltage operating window. This reduces the resistance for a given chip size and makes it more flexible for gate voltage rises.

Infineon has added improved technology to its first generation of SiC MOSFET circuits. The 1200V block voltage M1H chip is an advance in CoolSiC base technology and according to the manufacturer allows a much larger operating window for the gate voltage, improving the resistance over a given chip size. It features resistances up to 7 m³, 14 m³, and 20 m³.

At the same time, the larger gate operating range provides high strength against driver voltage spikes related to the gate layout, without limitation even at higher switching frequencies. Voltage overshoots and lower buds are already covered, and the gate does not need to be specially protected.

Furthermore, the robustness increases with a maximum transient junction temperature of +175°C, allowing for higher power density and covering overload events. Compared with the previous version, M1, the RG inner gate impedance of M1H has been modified in order to be able to easily improve the switching behavior for a specific application. The dynamic behavior remained the same with the M1H chip.

Besides chip technology, building and connection technology has also been adapted and implemented in easy-to-use modules and detached buildings using .XT connection technology. This should allow for higher power densities and enable development engineers to optimize their systems further.